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 DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
PMBZ5226B to PMBZ5257B Voltage regulator diodes
Product specification Supersedes data of 1996 Apr 26 1999 May 17
Philips Semiconductors
Product specification
Voltage regulator diodes
FEATURES * Total power dissipation: max. 250 mW * Tolerance series: 5% * Working voltage range: nom. 3.3 to 75 V * Non-repetitive peak reverse power dissipation: max. 40 W. APPLICATIONS * General regulation functions.
handbook, halfpage 2
PMBZ5226B to PMBZ5257B
PINNING PIN 1 2 3 anode not connected cathode DESCRIPTION
1
2 n.c.
1 3
DESCRIPTION Low-power voltage regulator diodes in small SOT23 plastic SMD packages. The series consists of 32 types with nominal working voltages from 3.3 to 75 V. MARKING TYPE NUMBER PMBZ5226B PMBZ5227B PMBZ5228B PMBZ5229B PMBZ5230B PMBZ5231B PMBZ5232B PMBZ5233B Note 1. = p : Made in Hong Kong. = t : Made in Malaysia. MARKING CODE(1) 8A 8B 8C 8D 8E 8F 8G 8H TYPE NUMBER PMBZ5234B PMBZ5235B PMBZ5236B PMBZ5237B PMBZ5238B PMBZ5239B PMBZ5240B PMBZ5241B MARKING CODE(1) 8J 8K 8L 8M 8N 8P 8Q 8R TYPE NUMBER PMBZ5242B PMBZ5243B PMBZ5244B PMBZ5245B PMBZ5246B PMBZ5247B PMBZ5248B PMBZ5249B MARKING CODE(1) 8S 8T 8U 8V 8W 8X 8Y 8Z TYPE NUMBER PMBZ5250B PMBZ5251B PMBZ5252B PMBZ5253B PMBZ5254B PMBZ5255B PMBZ5256B PMBZ5257B MARKING CODE 81A 81B 81C 81D 81E 81F 81G 81H
3
Top view
MAM243
Fig.1 Simplified outline (SOT23) and symbol.
1999 May 17
2
Philips Semiconductors
Product specification
Voltage regulator diodes
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL IF IZSM Ptot PZSM Tstg Tj Notes 1. Device mounted on a ceramic substrate of 8 x 10 x 0.7 mm. 2. Device mounted on an FR4 printed circuit-board. ELECTRICAL CHARACTERISTICS Total series Tj = 25 C unless otherwise specified. SYMBOL VF PARAMETER forward voltage PARAMETER continuous forward current
PMBZ5226B to PMBZ5257B
CONDITIONS -
MIN. see Table "Per type" - - - -65 -
MAX. 200
UNIT mA
non-repetitive peak reverse current tp = 100 s; square wave; Tj = 25 C prior to surge total power dissipation non-repetitive peak reverse power dissipation storage temperature junction temperature Tamb = 25 C; note 1 Tamb = 25 C; note 2 tp = 100 s; square wave; Tj = 25 C prior to surge; see Fig.2
300 250 40 +150 150
mW mW W C C
CONDITIONS IF = 200 mA; see Fig.3
MAX. 1.1
UNIT V
1999 May 17
3
1999 May 17 4
Philips Semiconductors
Per type Tj = 25 C unless otherwise specified. TEST WORKING DIFFERENTIAL TEMP. COEFF. SZ (%/K) CURRENT VOLTAGE RESISTANCE rdif () at IZ(2) IZtest (mA) VZ (V)(1) at IZtest at IZ = 0.25 mA NOM. PMBZ5226B PMBZ5227B PMBZ5228B PMBZ5229B PMBZ5230B PMBZ5231B PMBZ5232B PMBZ5233B PMBZ5234B PMBZ5235B PMBZ5236B PMBZ5237B PMBZ5238B PMBZ5239B PMBZ5240B PMBZ5241B PMBZ5242B PMBZ5243B PMBZ5244B PMBZ5245B PMBZ5246B PMBZ5247B PMBZ5248B PMBZ5249B PMBZ5250B PMBZ5251B 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.0 6.2 6.8 7.5 8.2 8.7 9.1 10 11 12 13 14 15 16 17 18 19 20 22 MAX. 1600 1700 1900 2000 2000 2000 1600 1600 1000 750 500 500 600 600 600 600 600 600 600 600 600 600 600 600 600 600 TYP. -0.064 -0.065 -0.063 -0.058 -0.047 -0.013 +0.023 +0.023 +0.039 +0.040 +0.047 +0.052 +0.053 +0.055 +0.055 +0.058 +0.062 +0.065 +0.067 +0.073 +0.073 +0.073 +0.078 +0.078 +0.080 +0.080 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 9.5 9.0 8.5 7.8 7.4 7.0 6.6 6.2 5.6 DIODE CAP. Cd (pF) at f = 1 MHz; at VR = 0 V MAX. 450 450 450 450 450 300 300 300 200 200 150 150 150 150 90 85 85 80 80 75 75 75 70 70 60 60 REVERSE CURRENT at REVERSE VOLTAGE IR (A) MAX. 25 15 10 5 5 5 5 5 5 3 3 3 3 3 3 2 1 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 VR (V) 1.0 1.0 1.0 1.0 1.0 2.0 3.0 3.5 4.0 5.0 6.0 6.5 6.5 7.0 8.0 8.4 9.1 9.9 10 11 12 13 14 14 15 17 NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) at tp = 100 s; Tamb = 25 C MAX. 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 4.0 4.0 3.5 3.0
Voltage regulator diodes
TYPE No.
PMBZ5226B to PMBZ5257B
3.0 2.5 2.5 2.5 2.0 2.0 1.5 1.5 1.5 1.5 1.5 1.25
Product specification
1999 May 17 5
Philips Semiconductors
TYPE No.
TEST WORKING DIFFERENTIAL TEMP. COEFF. SZ (%/K) CURRENT VOLTAGE RESISTANCE at IZ(2) rdif () IZtest (mA) VZ (V)(1) at IZ = 0.25 mA at IZtest NOM. MAX. 600 600 600 600 600 700 TYP. +0.081 +0.082 +0.085 +0.085 +0.085 +0.085 5.2 5.0 4.6 4.5 4.2 3.8
DIODE CAP. Cd (pF) at f = 1 MHz; at VR = 0 V MAX. 55 55 50 50 50 45
REVERSE CURRENT at REVERSE VOLTAGE IR (A) MAX. 0.1 0.1 0.1 0.1 0.1 0.1 VR (V) 18 19 21 21 23 25
NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) at tp = 100 s; Tamb = 25 C MAX. 1.25 1.25 1.0 1.0 1.0 0.9
Voltage regulator diodes
PMBZ5252B PMBZ5253B PMBZ5254B PMBZ5255B PMBZ5256B PMBZ5257B Notes
24 25 27 28 30 33
1. VZ is measured with device at thermal equilibrium while mounted on a ceramic substrate of 8 x 10 x 0.7 mm. 2. For types PMBZ5226B to PMBZ5242B the IZ current is 7.5 mA; for PMBZ5243B and higher IZ = IZtest. SZ values valid between 25 C and 125 C.
PMBZ5226B to PMBZ5257B
Product specification
Philips Semiconductors
Product specification
Voltage regulator diodes
THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on a printed-circuit board. GRAPHICAL DATA
MBG801
PMBZ5226B to PMBZ5257B
PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1
CONDITIONS
VALUE 330 500
UNIT K/W K/W
103 handbook, halfpage PZSM (W) 102
MBG781
handbook, halfpage
300
IF (mA) 200
(1)
10
(2)
100
1 10-1
1
duration (ms)
10
0 0.6
0.8
VF (V)
1.0
(1) Tj = 25 C (prior to surge). (2) Tj = 150 C (prior to surge).
Fig.2
Maximum permissible non-repetitive peak reverse power dissipation versus duration.
Fig.3
Forward current as a function of forward voltage; typical values.
1999 May 17
6
Philips Semiconductors
Product specification
Voltage regulator diodes
PACKAGE OUTLINE Plastic surface mounted package; 3 leads
PMBZ5226B to PMBZ5257B
SOT23
D
B
E
A
X
HE
vMA
3
Q A A1
1
e1 e bp
2
wMB detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1
OUTLINE VERSION SOT23
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
1999 May 17
7
Philips Semiconductors
Product specification
Voltage regulator diodes
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
PMBZ5226B to PMBZ5257B
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1999 May 17
8
Philips Semiconductors
Product specification
Voltage regulator diodes
NOTES
PMBZ5226B to PMBZ5257B
1999 May 17
9
Philips Semiconductors
Product specification
Voltage regulator diodes
NOTES
PMBZ5226B to PMBZ5257B
1999 May 17
10
Philips Semiconductors
Product specification
Voltage regulator diodes
NOTES
PMBZ5226B to PMBZ5257B
1999 May 17
11
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1999
Internet: http://www.semiconductors.philips.com
SCA 64
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
115002/00/02/pp12
Date of release: 1999 May 17
Document order number:
9397 750 05922


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